Renesas Electronics America Inc
IC EEPROM 64KB C-MOS 28DIP
R1EV58064BDANBI#B2 is a Memory manufactured by Renesas Electronics America Inc. IC EEPROM 64KB C-MOS 28DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 5.5V, package / case 28-DIP (0.600", 15.24mm).
In Stock: 7,324
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 64Kb (8K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ms |
| Access Time | 100 ns |
| Voltage - Supply | 2.7V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP (0.600", 15.24mm) |
| Supplier Device Package | 28-DIP |
R1EV58064BDANBI#B2 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| R1EV58064BDARBI#B2 | Renesas Electronics America Inc | IC EEPROM 64KB C-MOS 28DIP | 100% | View |
| M27C2001-10F6 | STMicroelectronics | IC EPROM 2MBIT PARALLEL 32CDIP | 84% | View |
| HM6-6617B-9 | Harris Corporation | 2K X 8 OTPROM | 83% | View |
| DS1250W-100IND+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 4MBIT PARALLEL 32EDIP | 64% | View |
| DS1220AD-100IND+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 16KBIT PARALLEL 24EDIP | 56% | View |
| DS1220AB-100IND+ | Analog Devices Inc./Maxim Integrated | IC NVSRAM 16KBIT PARALLEL 24EDIP | 55% | View |
Submit your RFQ for R1EV58064BDANBI#B2 and get a quote within 24 hours.
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