Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 165CABGA
IDT71V25761YSA200BQI8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PAR 165CABGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.465V, package / case 165-TBGA.
In Stock: 2,410
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mb (128K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-CABGA (13x15) |
IDT71V25761YSA200BQI8 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H32M16LFBF-5 AIT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 92% | View |
| AS4C64M16MD1A-5BIN | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 60FBGA | 92% | View |
| AS4C8M16S-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 90% | View |
| W989D2DBJX6I | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 82% | View |
| 71V2556SA100BGGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 65% | View |
| 71T75602S100BGI | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 61% | View |
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