Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 119PBGA
IDT71V25761YSA200BGI8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PARALLEL 119PBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.465V, package / case 119-BGA.
In Stock: 9,345
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mb (128K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
IDT71V25761YSA200BGI8 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| NDS73PBE-20IT TR | Insignis Technology Corporation | IC DRAM 128MBIT LVTTL 90FBGA | 99% | View |
| MT46H64M16LFBF-5 IT:B TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60VFBGA | 92% | View |
| AS4C32M32MD1A-5BIN | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 90FBGA | 92% | View |
| AS4C8M16SA-6BAN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 90% | View |
| W94AD6KBHX6I TR | Winbond Electronics | 1GB LPDDR, X16, 166MHZ, IND TEMP | 82% | View |
| 71V2556S100PFGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 65% | View |
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