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IDT71V25761YSA183BQI8 - Renesas Electronics America Inc - Memory

IDT71V25761YSA183BQI8

Renesas Electronics America Inc

IC SRAM 4.5MBIT PAR 165CABGA

IDT71V25761YSA183BQI8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PAR 165CABGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.465V, package / case 165-TBGA.

In Stock: 1,354

Product Attributes

AttributeValue
Product StatusObsolete
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size4.5Mb (128K x 36)
Memory InterfaceParallel
Clock Frequency183 MHz
Write Cycle Time - Word, Page-
Access Time5.5 ns
Voltage - Supply3.135V ~ 3.465V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-TBGA
Supplier Device Package165-CABGA (13x15)

Frequently Asked Questions

IDT71V25761YSA183BQI8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PAR 165CABGA

The mounting type of IDT71V25761YSA183BQI8 is Surface Mount.

The operating temperature range of IDT71V25761YSA183BQI8 is -40°C ~ 85°C (TA).

The supply voltage of IDT71V25761YSA183BQI8 is 3.135V ~ 3.465V.

The memory specification of IDT71V25761YSA183BQI8 is 4.5Mb (128K x 36).

Alternative Products

IDT71V25761YSA183BQI8 is Obsolete. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
IS42S16100F-6TLI ISSI, Integrated Silicon Solution Inc IC DRAM 16MBIT PAR 50TSOP II 94% View
AS4C4M32S-6TINTR Alliance Memory, Inc. IC DRAM 128MBIT PAR 86TSOP II 94% View
IS42SM32400G-6BLI ISSI, Integrated Silicon Solution Inc IC DRAM 128MBIT PARALLEL 90TFBGA 93% View
IS42SM16160E-6BLI ISSI, Integrated Silicon Solution Inc IC DRAM 256MBIT PARALLEL 54TFBGA 93% View
IS42S32800B-7TI-TR ISSI, Integrated Silicon Solution Inc IC DRAM 256MBIT PAR 86TSOP II 87% View
MT48LC2M32B2B5-7 IT:G TR Micron Technology Inc. IC DRAM 64MBIT PARALLEL 90VFBGA 87% View

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