Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 119PBGA
IDT71V25761SA200BGI is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PARALLEL 119PBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.465V, package / case 119-BGA.
In Stock: 8,455
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mb (128K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
IDT71V25761SA200BGI is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H32M16LFBF-5 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 92% | View |
| MT46H16M32LFCM-5 IT:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 92% | View |
| W948D6FBHX5J | Winbond Electronics | IC DRAM 256MBIT PARALLEL 60VFBGA | 92% | View |
| IS43LR32320C-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 90TFBGA | 90% | View |
| MT46H16M32LFB5-6 AIT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 82% | View |
| 71V65803S100BGGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 65% | View |
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