3J LIMITED
H5N2305P-E
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
H5N2305P-E is a Transistors - Bipolar (BJT) - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR.
In Stock: 310
Product Attributes
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
Related Products
Manufacturers in Transistors - Bipolar (BJT) - Single
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