Renesas Electronics America Inc
IC SRAM 1.125MBIT PAR 256CABGA
70V3579S6BCI is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 1.125MBIT PAR 256CABGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.15V ~ 3.45V, package / case 256-LBGA.
In Stock: 8,130
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 1.125Mb (32K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | 6 ns |
| Voltage - Supply | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-CABGA (17x17) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 71V632S6PFGI8 | Renesas Electronics America Inc | IC SRAM 2MBIT PARALLEL 100TQFP | 100% | View |
| 70V3569S6DRI | Renesas Electronics America Inc | IC SRAM 576KBIT PARALLEL 208PQFP | 100% | View |
| IS42SM16800H-75BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 54TFBGA | 95% | View |
| IS42SM16160K-75BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 54TFBGA | 95% | View |
| IS42RM16200D-75BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 32MBIT PARALLEL 54TFBGA | 90% | View |
| IS42RM32400H-75BI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PARALLEL 90TFBGA | 90% | View |
Submit your RFQ for 70V3579S6BCI and get a quote within 24 hours.
3J LIMITED
