Renesas Electronics America Inc
IC SRAM 1.125MBIT PAR 256CABGA
70V3579S6BC is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 1.125MBIT PAR 256CABGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3.15V ~ 3.45V, package / case 256-LBGA.
In Stock: 7,600
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Synchronous |
| Memory Size | 1.125Mb (32K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | 6 ns |
| Voltage - Supply | 3.15V ~ 3.45V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-CABGA (17x17) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS42S32800J-75EBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 90TFBGA | 98% | View |
| MT48LC8M32B2TG-7 TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 86TSOP II | 98% | View |
| MT48LC8M32B2F5-7 IT TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 90VFBGA | 98% | View |
| MSM56V16160K8T3K | Rohm Semiconductor | IC DRAM 16MBIT PAR 50TSOP II | 98% | View |
| IS42SM32160E-75BL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 90TFBGA | 95% | View |
| MT54W2MH8JF-6 | Micron Technology Inc. | IC SRAM 16MBIT PARALLEL 165FBGA | 81% | View |
Submit your RFQ for 70V3579S6BC and get a quote within 24 hours.
3J LIMITED
