RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
70T659S12BC8 - Renesas Electronics America Inc - Memory

70T659S12BC8

Renesas Electronics America Inc

IC SRAM 4.5MBIT PAR 256CABGA

70T659S12BC8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PAR 256CABGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.4V ~ 2.6V, package / case 256-LBGA.

In Stock: 1,355

Product Attributes

AttributeValue
Product StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Dual Port, Asynchronous
Memory Size4.5Mb (128K x 36)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page12ns
Access Time12 ns
Voltage - Supply2.4V ~ 2.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case256-LBGA
Supplier Device Package256-CABGA (17x17)

Frequently Asked Questions

70T659S12BC8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PAR 256CABGA

The mounting type of 70T659S12BC8 is Surface Mount.

The operating temperature range of 70T659S12BC8 is 0°C ~ 70°C (TA).

The supply voltage of 70T659S12BC8 is 2.4V ~ 2.6V.

The memory specification of 70T659S12BC8 is 4.5Mb (128K x 36).

Alternative Products

Part NumberManufacturerDescriptionMatch
CY7C1399B-12ZXC Infineon Technologies IC SRAM 256KBIT PAR 28TSOP I 95% View
IDT71V416S12PHI Renesas Electronics America Inc IC SRAM 4MBIT PARALLEL 44TSOP II 95% View
70V9089L12PF Renesas Electronics America Inc IC SRAM 512KBIT PARALLEL 100TQFP 93% View
AS7C4098A-12JCNTR Alliance Memory, Inc. IC SRAM 4MBIT PARALLEL 44SOJ 87% View
AS7C4098A-12TINTR Alliance Memory, Inc. IC SRAM 4MBIT PARALLEL 44TSOP2 87% View
71124S12YG8 Renesas Electronics America Inc IC SRAM 1MBIT PARALLEL 32SOJ 87% View

Related Products

Manufacturers in Memory

Need a Quote for This Part?

Submit your RFQ for 70T659S12BC8 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.