UPD48576118F1 - LOW LATENCY HIGH
UPD48576118F1-E18-DW1-A is a Memory manufactured by Renesas. UPD48576118F1 - LOW LATENCY HIGH. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 144-TBGA.
In Stock: 4,312
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LLDRAM |
| Memory Size | 576Mb (32M x 18) |
| Memory Interface | HSTL |
| Clock Frequency | 533 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 300 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TBGA |
| Supplier Device Package | 144-TFBGA (11x18.5) |
UPD48576118F1-E18-DW1-A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W971GG8NB-18 | Winbond Electronics | 1GB, DDR2-1066, X8 | 98% | View |
| W971GG6NB-18 | Winbond Electronics | IC DRAM 1GBIT PARALLEL 84WBGA | 98% | View |
| IS43TR16128C-107MBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 63% | View |
| IS43TR16128B-107MBL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 63% | View |
| IS43TR16128C-107MBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 63% | View |
| IS43TR16128B-107MBL | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 63% | View |
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