UPD48288236AF1 - LOW LATENCY HIG
UPD48288236AF1-E24-DW1-A is a Memory manufactured by Renesas. UPD48288236AF1 - LOW LATENCY HIG. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 95°C (TC), voltage - supply 1.7V ~ 1.9V, package / case 144-TBGA.
In Stock: 1,553
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | LLDRAM |
| Memory Size | 288Mb (8M x 36) |
| Memory Interface | HSTL |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 500 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 144-TBGA |
| Supplier Device Package | 144-TFBGA (11x18.5) |
UPD48288236AF1-E24-DW1-A is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43DR81280B-25EBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 99% | View |
| IS43DR82560C-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 60TWBGA | 89% | View |
| MT47H32M16BN-37E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 80% | View |
| MT47H32M8BP-37V:B | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | 80% | View |
| MT47H32M16CC-37E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | 80% | View |
| IS43DR16160B-37CBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | 79% | View |
Submit your RFQ for UPD48288236AF1-E24-DW1-A and get a quote within 24 hours.
3J LIMITED
