2SB1261 - PNP SILICON EPITAXIAL
2SB1261(1)-AZ is a Transistors - Bipolar (BJT) - Single manufactured by Renesas. 2SB1261 - PNP SILICON EPITAXIAL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 3 A.
In Stock: 6,207
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 600mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 50MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (MP-3Z) |
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