2SA812B-T1B-AT - PNP SILICON EPI
2SA812B-T1B-AT is a Transistors - Bipolar (BJT) - Single manufactured by Renesas. 2SA812B-T1B-AT - PNP SILICON EPI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA.
In Stock: 201,000
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V |
| Power - Max | 200 mW |
| Frequency - Transition | 180MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-MINIMOLD |
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