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P3M06120K4 - PN Junction Semiconductor - Transistors - FETs, MOSFETs - Single

P3M06120K4

PN Junction Semiconductor

SICFET N-CH 650V 27A TO-247-4

P3M06120K4 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 27A TO-247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 90

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs158mOhm @ 10A, 15V
Vgs(th) (Max) @ Id2.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)131W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

Frequently Asked Questions

P3M06120K4 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 27A TO-247-4

The mounting type of P3M06120K4 is Through Hole.

The operating temperature range of P3M06120K4 is -55°C ~ 175°C (TJ).

The package type of P3M06120K4 is TO-247-4.

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