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P3M06060G7 - PN Junction Semiconductor - Transistors - FETs, MOSFETs - Single

P3M06060G7

PN Junction Semiconductor

SICFET N-CH 650V 44A TO-263-7

P3M06060G7 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 44A TO-263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

In Stock: 40

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C44A
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id2.2V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)159W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Frequently Asked Questions

P3M06060G7 is a Transistors - FETs, MOSFETs - Single manufactured by PN Junction Semiconductor. SICFET N-CH 650V 44A TO-263-7

The mounting type of P3M06060G7 is Surface Mount.

The operating temperature range of P3M06060G7 is -55°C ~ 175°C (TJ).

The package type of P3M06060G7 is TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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