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NXH80T120L3Q0S3G - onsemi - Transistors - IGBTs - Modules

NXH80T120L3Q0S3G

onsemi

PIM GENERATION3 Q0PACK 1200V, 80

NXH80T120L3Q0S3G is a Transistors - IGBTs - Modules manufactured by onsemi. PIM GENERATION3 Q0PACK 1200V, 80. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case Module, current - collector (ic) (max) 75 A.

In Stock: 24

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)75 A
Power - Max188 W
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 80A
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce18.15 nF @ 20 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package20-PIM/Q0PACK (55x32.5)

Frequently Asked Questions

NXH80T120L3Q0S3G is a Transistors - IGBTs - Modules manufactured by onsemi. PIM GENERATION3 Q0PACK 1200V, 80

The mounting type of NXH80T120L3Q0S3G is Chassis Mount.

The operating temperature range of NXH80T120L3Q0S3G is -40°C ~ 175°C (TJ).

The package type of NXH80T120L3Q0S3G is Module.

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