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NXH100B120H3Q0PG - onsemi - Transistors - IGBTs - Modules

NXH100B120H3Q0PG

onsemi

PIM 60-80KW Q0BOOST-L57 1200V, 1

NXH100B120H3Q0PG is a Transistors - IGBTs - Modules manufactured by onsemi. PIM 60-80KW Q0BOOST-L57 1200V, 1. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Module, current - collector (ic) (max) 61 A.

In Stock: 24

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)61 A
Power - Max186 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce9.075 nF @ 20 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package22-PIM (55x32.5)

Frequently Asked Questions

NXH100B120H3Q0PG is a Transistors - IGBTs - Modules manufactured by onsemi. PIM 60-80KW Q0BOOST-L57 1200V, 1

The mounting type of NXH100B120H3Q0PG is Chassis Mount.

The operating temperature range of NXH100B120H3Q0PG is -40°C ~ 150°C (TJ).

The package type of NXH100B120H3Q0PG is Module.

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