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NTH4L022N120M3S - onsemi - Transistors - FETs, MOSFETs - Single

NTH4L022N120M3S

onsemi

SIC MOS TO247-4L 22MOHM 1200V

NTH4L022N120M3S is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. SIC MOS TO247-4L 22MOHM 1200V. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 184

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs151 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3175 pF @ 800 V
FET Feature-
Power Dissipation (Max)352W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

Frequently Asked Questions

NTH4L022N120M3S is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. SIC MOS TO247-4L 22MOHM 1200V

The mounting type of NTH4L022N120M3S is Through Hole.

The operating temperature range of NTH4L022N120M3S is -55°C ~ 175°C (TJ).

The package type of NTH4L022N120M3S is TO-247-4.

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