NSVMUN5116 - DIGITAL BJT PNP - P
NSVMUN5116T1G-M02 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by onsemi. NSVMUN5116 - DIGITAL BJT PNP - P. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 202 mW.
In Stock: 102,000
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 202 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70 (SOT323) |
Submit your RFQ for NSVMUN5116T1G-M02 and get a quote within 24 hours.
3J LIMITED
