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NSV60101DMR6T1G - onsemi - Transistors - Bipolar (BJT) - Arrays

NSV60101DMR6T1G

onsemi

60V, 1A DUAL NPN LOW VCE(

NSV60101DMR6T1G is a Transistors - Bipolar (BJT) - Arrays manufactured by onsemi. 60V, 1A DUAL NPN LOW VCE(. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-74, SOT-457, current - collector (ic) (max) 1A.

In Stock: 2,356

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic200mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA, 5V
Power - Max530mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSC-74

Frequently Asked Questions

NSV60101DMR6T1G is a Transistors - Bipolar (BJT) - Arrays manufactured by onsemi. 60V, 1A DUAL NPN LOW VCE(

The mounting type of NSV60101DMR6T1G is Surface Mount.

The operating temperature range of NSV60101DMR6T1G is -55°C ~ 150°C (TJ).

The package type of NSV60101DMR6T1G is SC-74, SOT-457.

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