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MUN5235DW1T1G - onsemi - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

MUN5235DW1T1G

onsemi

TRANS 2NPN PREBIAS 0.25W SOT363

MUN5235DW1T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS 2NPN PREBIAS 0.25W SOT363. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 250mW.

In Stock: 17,473

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

Frequently Asked Questions

MUN5235DW1T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS 2NPN PREBIAS 0.25W SOT363

The mounting type of MUN5235DW1T1G is Surface Mount.

The package type of MUN5235DW1T1G is 6-TSSOP, SC-88, SOT-363.

The current rating of MUN5235DW1T1G is 100mA.

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