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MJE350G - onsemi - Transistors - Bipolar (BJT) - Single

MJE350G

onsemi

TRANS PNP 300V 0.5A TO126

MJE350G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP 300V 0.5A TO126. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 500 mA.

In Stock: 58

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max20 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

Frequently Asked Questions

MJE350G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP 300V 0.5A TO126

The mounting type of MJE350G is Through Hole.

The operating temperature range of MJE350G is -65°C ~ 150°C (TJ).

The package type of MJE350G is TO-225AA, TO-126-3.

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