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MJE271G - onsemi - Transistors - Bipolar (BJT) - Single

MJE271G

onsemi

TRANS PNP DARL 100V 2A TO126

MJE271G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP DARL 100V 2A TO126. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 2 A.

In Stock: 10,677

Product Attributes

AttributeValue
Product StatusObsolete
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1500 @ 120mA, 10V
Power - Max1.5 W
Frequency - Transition6MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

Frequently Asked Questions

MJE271G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP DARL 100V 2A TO126

The mounting type of MJE271G is Through Hole.

The operating temperature range of MJE271G is -65°C ~ 150°C (TJ).

The package type of MJE271G is TO-225AA, TO-126-3.

Yes, MJE271G is listed as Obsolete. Consider requesting a quote for alternative parts.

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