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MJE181G - onsemi - Transistors - Bipolar (BJT) - Single

MJE181G

onsemi

TRANS NPN 60V 3A TO126

MJE181G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 60V 3A TO126. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 3 A.

In Stock: 935

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic1.7V @ 600mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Power - Max1.5 W
Frequency - Transition50MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

Frequently Asked Questions

MJE181G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 60V 3A TO126

The mounting type of MJE181G is Through Hole.

The operating temperature range of MJE181G is -65°C ~ 150°C (TJ).

The package type of MJE181G is TO-225AA, TO-126-3.

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