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MJD253-1G - onsemi - Transistors - Bipolar (BJT) - Single

MJD253-1G

onsemi

TRANS PNP 100V 4A IPAK

MJD253-1G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP 100V 4A IPAK. Key specifications: mounting type Through Hole, operating temperature -65°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 4 A.

In Stock: 686

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Power - Max1.4 W
Frequency - Transition40MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-PAK

Frequently Asked Questions

MJD253-1G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS PNP 100V 4A IPAK

The mounting type of MJD253-1G is Through Hole.

The operating temperature range of MJD253-1G is -65°C ~ 150°C (TJ).

The package type of MJD253-1G is TO-251-3 Short Leads, IPak, TO-251AA.

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