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MJ11012G - onsemi - Transistors - Bipolar (BJT) - Single

MJ11012G

onsemi

TRANS NPN DARL 60V 30A TO204

MJ11012G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN DARL 60V 30A TO204. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 200°C (TJ), package / case TO-204AA, TO-3, current - collector (ic) (max) 30 A.

In Stock: 107

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Power - Max200 W
Frequency - Transition4MHz
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-204 (TO-3)

Frequently Asked Questions

MJ11012G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN DARL 60V 30A TO204

The mounting type of MJ11012G is Through Hole.

The operating temperature range of MJ11012G is -55°C ~ 200°C (TJ).

The package type of MJ11012G is TO-204AA, TO-3.

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