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IRFNL210BTA-FP001 - onsemi - Transistors - FETs, MOSFETs - Single

IRFNL210BTA-FP001

onsemi

IRFNL210 - POWER MOSFET, N-CHANN

IRFNL210BTA-FP001 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. IRFNL210 - POWER MOSFET, N-CHANN. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-226-3, TO-92-3 Long Body.

In Stock: 2,000

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92L
Package / CaseTO-226-3, TO-92-3 Long Body

Frequently Asked Questions

IRFNL210BTA-FP001 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. IRFNL210 - POWER MOSFET, N-CHANN

The mounting type of IRFNL210BTA-FP001 is Through Hole.

The operating temperature range of IRFNL210BTA-FP001 is -55°C ~ 150°C (TJ).

The package type of IRFNL210BTA-FP001 is TO-226-3, TO-92-3 Long Body.

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