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H11B1M - onsemi - Optoisolators - Transistor, Photovoltaic Output

H11B1M

onsemi

OPTOISO 4.17KV DARL W/BASE 6DIP

H11B1M is a Optoisolators - Transistor, Photovoltaic Output manufactured by onsemi. OPTOISO 4.17KV DARL W/BASE 6DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 100°C, voltage - forward (vf) (typ) 1.2V, package / case 6-DIP (0.300", 7.62mm).

In Stock: 875

Product Attributes

AttributeValue
Product StatusActive
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)500% @ 1mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)25µs, 18µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)30V
Current - Output / Channel150mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)80 mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

Frequently Asked Questions

H11B1M is a Optoisolators - Transistor, Photovoltaic Output manufactured by onsemi. OPTOISO 4.17KV DARL W/BASE 6DIP

The mounting type of H11B1M is Through Hole.

The operating temperature range of H11B1M is -40°C ~ 100°C.

The supply voltage of H11B1M is 1.2V.

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