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FQP6N80C - onsemi - Transistors - FETs, MOSFETs - Single

FQP6N80C

onsemi

MOSFET N-CH 800V 5.5A TO220-3

FQP6N80C is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 5.5A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 685

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1310 pF @ 25 V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

Frequently Asked Questions

FQP6N80C is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 5.5A TO220-3

The mounting type of FQP6N80C is Through Hole.

The operating temperature range of FQP6N80C is -55°C ~ 150°C (TJ).

The package type of FQP6N80C is TO-220-3.

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