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FQA13N80-F109 - onsemi - Transistors - FETs, MOSFETs - Single

FQA13N80-F109

onsemi

MOSFET N-CH 800V 12.6A TO3PN

FQA13N80-F109 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 12.6A TO3PN. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-3P-3, SC-65-3.

In Stock: 438

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

Frequently Asked Questions

FQA13N80-F109 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 800V 12.6A TO3PN

The mounting type of FQA13N80-F109 is Through Hole.

The operating temperature range of FQA13N80-F109 is -55°C ~ 150°C (TJ).

The package type of FQA13N80-F109 is TO-3P-3, SC-65-3.

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