MOSFET N-CH 30V 6.1A SUPERSOT6
FDC855N is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 30V 6.1A SUPERSOT6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.
In Stock: 6,407
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 655 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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3J LIMITED
