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EMD4DXV6T1G - onsemi - Transistors - Bipolar (BJT) - Arrays, Pre-Biased

EMD4DXV6T1G

onsemi

TRANS PREBIAS NPN/PNP 50V SOT563

EMD4DXV6T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS PREBIAS NPN/PNP 50V SOT563. Key specifications: mounting type Surface Mount, package / case SOT-563, SOT-666, current - collector (ic) (max) 100mA, power - max 500mW.

In Stock: 518,000

Product Attributes

AttributeValue
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47kOhms, 10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Frequently Asked Questions

EMD4DXV6T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS PREBIAS NPN/PNP 50V SOT563

The mounting type of EMD4DXV6T1G is Surface Mount.

The package type of EMD4DXV6T1G is SOT-563, SOT-666.

The current rating of EMD4DXV6T1G is 100mA.

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