BIP NPN 0.1A 200V
4MN10CH-TL-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. BIP NPN 0.1A 200V. Key specifications: mounting type Surface Mount, package / case SC-96, current - collector (ic) (max) 100mA, power - max 600mW.
In Stock: 38,970
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Frequency - Transition | 400MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 600mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Supplier Device Package | 3-CPH |
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3J LIMITED
