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2SC5551AE-TD-E - onsemi - Transistors - Bipolar (BJT) - RF

2SC5551AE-TD-E

onsemi

RF TRANS NPN 30V 3.5GHZ PCP

2SC5551AE-TD-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. RF TRANS NPN 30V 3.5GHZ PCP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 300mA.

In Stock: 9,409

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Frequency - Transition3.5GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 50mA, 5V
Current - Collector (Ic) (Max)300mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

Frequently Asked Questions

2SC5551AE-TD-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. RF TRANS NPN 30V 3.5GHZ PCP

The mounting type of 2SC5551AE-TD-E is Surface Mount.

The operating temperature range of 2SC5551AE-TD-E is 150°C (TJ).

The package type of 2SC5551AE-TD-E is TO-243AA.

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