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2SC5227A-5-TB-E - onsemi - Transistors - Bipolar (BJT) - RF

2SC5227A-5-TB-E

onsemi

RF TRANS NPN 10V 7GHZ 3CP

2SC5227A-5-TB-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. RF TRANS NPN 10V 7GHZ 3CP. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 70mA.

In Stock: 2,990

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 1GHz
Gain12dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce135 @ 20mA, 5V
Current - Collector (Ic) (Max)70mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-CP

Frequently Asked Questions

2SC5227A-5-TB-E is a Transistors - Bipolar (BJT) - RF manufactured by onsemi. RF TRANS NPN 10V 7GHZ 3CP

The mounting type of 2SC5227A-5-TB-E is Surface Mount.

The operating temperature range of 2SC5227A-5-TB-E is 150°C (TJ).

The package type of 2SC5227A-5-TB-E is TO-236-3, SC-59, SOT-23-3.

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