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2SC3646S-P-TD-E - onsemi - Transistors - Bipolar (BJT) - Single

2SC3646S-P-TD-E

onsemi

TRANS NPN 100V 1A

2SC3646S-P-TD-E is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 100V 1A. Key specifications: mounting type Surface Mount, package / case TO-243AA, current - collector (ic) (max) 1 A, power - max 500 mW.

In Stock: 5,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 5V
Power - Max500 mW
Frequency - Transition120MHz
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePCP

Frequently Asked Questions

2SC3646S-P-TD-E is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN 100V 1A

The mounting type of 2SC3646S-P-TD-E is Surface Mount.

The package type of 2SC3646S-P-TD-E is TO-243AA.

The current rating of 2SC3646S-P-TD-E is 1 A.

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