MOSFET N-CH 100V 1.8A SOT223
PMT200EN,115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. MOSFET N-CH 100V 1.8A SOT223. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.
In Stock: 25,828
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF @ 80 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 8.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-73 |
| Package / Case | TO-261-4, TO-261AA |
Submit your RFQ for PMT200EN,115 and get a quote within 24 hours.
3J LIMITED
