NOW WEEN - PHE13009 - POWER BIPO
PHE13009/DG,127 is a Transistors - Bipolar (BJT) - Single manufactured by NXP USA Inc.. NOW WEEN - PHE13009 - POWER BIPO. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 12 A.
In Stock: 4,980
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Power - Max | 80 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
Submit your RFQ for PHE13009/DG,127 and get a quote within 24 hours.
3J LIMITED
