POWER FIELD-EFFECT TRANSISTOR
PH6530AL115 is a Transistors - FETs, MOSFETs - Single manufactured by NXP USA Inc.. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Surface Mount, package / case SC-100, SOT-669.
In Stock: 4,500
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
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