PDTB143EQA SMALL SIGNAL FET
PDTB143EQA147 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. PDTB143EQA SMALL SIGNAL FET. Key specifications: mounting type Surface Mount, package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 500 mA, power - max 325 mW.
In Stock: 13,950
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 150 MHz |
| Power - Max | 325 mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 |
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