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PDTA113EMB,315 - NXP USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased

PDTA113EMB,315

NXP USA Inc.

NOW NEXPERIA PDTA113EMB - SMALL

PDTA113EMB,315 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. NOW NEXPERIA PDTA113EMB - SMALL. Key specifications: mounting type Surface Mount, package / case SC-101, SOT-883, current - collector (ic) (max) 100 mA, power - max 250 mW.

In Stock: 140,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition180 MHz
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageDFN1006B-3

Frequently Asked Questions

PDTA113EMB,315 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NXP USA Inc.. NOW NEXPERIA PDTA113EMB - SMALL

The mounting type of PDTA113EMB,315 is Surface Mount.

The package type of PDTA113EMB,315 is SC-101, SOT-883.

The current rating of PDTA113EMB,315 is 100 mA.

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