AIRFAST RF POWER GAN TRANSISTOR
A2G35S160-01SR3 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. AIRFAST RF POWER GAN TRANSISTOR. Key specifications: voltage - rated 125 V, package / case NI-400S-2S, current - test 190 mA, power - output 51dBm.
In Stock: 223
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | LDMOS |
| Frequency | 3.4GHz ~ 3.6GHz |
| Gain | 15.7dB |
| Voltage - Test | 48 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 190 mA |
| Power - Output | 51dBm |
| Voltage - Rated | 125 V |
| Package / Case | NI-400S-2S |
| Supplier Device Package | NI-400S-2S |
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