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PBSS5612PA,115 - NXP Semiconductors - Transistors - Bipolar (BJT) - Single

PBSS5612PA,115

NXP Semiconductors

NEXPERIA PBSS5612PA - SMALL SIGN

PBSS5612PA,115 is a Transistors - Bipolar (BJT) - Single manufactured by NXP Semiconductors. NEXPERIA PBSS5612PA - SMALL SIGN. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 3-PowerUDFN, current - collector (ic) (max) 6 A.

In Stock: 99,332

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)12 V
Vce Saturation (Max) @ Ib, Ic300mV @ 300mA, 6A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce190 @ 2A, 2V
Power - Max2.1 W
Frequency - Transition60MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-PowerUDFN
Supplier Device Package3-HUSON (2x2)

Frequently Asked Questions

PBSS5612PA,115 is a Transistors - Bipolar (BJT) - Single manufactured by NXP Semiconductors. NEXPERIA PBSS5612PA - SMALL SIGN

The mounting type of PBSS5612PA,115 is Surface Mount.

The operating temperature range of PBSS5612PA,115 is 150°C (TJ).

The package type of PBSS5612PA,115 is 3-PowerUDFN.

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