NEXPERIA 2PD2150 - POWER BIPOLAR
2PD2150,115 is a Transistors - Bipolar (BJT) - Single manufactured by NXP Semiconductors. NEXPERIA 2PD2150 - POWER BIPOLAR. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-243AA, current - collector (ic) (max) 3 A.
In Stock: 8,030
| Attribute | Value |
|---|---|
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 220MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | SOT-89 |
Submit your RFQ for 2PD2150,115 and get a quote within 24 hours.
3J LIMITED
