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NTE287H - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single

NTE287H

NTE Electronics, Inc

TRANS NPN 350V 0.5A TO92

NTE287H is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN 350V 0.5A TO92. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-226-3, TO-92-3 (TO-226AA), current - collector (ic) (max) 500 mA.

In Stock: 336

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 10V
Power - Max625 mW
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92

Frequently Asked Questions

NTE287H is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN 350V 0.5A TO92

The mounting type of NTE287H is Through Hole.

The operating temperature range of NTE287H is 150°C (TJ).

The package type of NTE287H is TO-226-3, TO-92-3 (TO-226AA).

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