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NTE2633 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - RF

NTE2633

NTE Electronics, Inc

T-NPN SI VIDEO DR 1GHZ TO-126

NTE2633 is a Transistors - Bipolar (BJT) - RF manufactured by NTE Electronics, Inc. T-NPN SI VIDEO DR 1GHZ TO-126. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-225AA, TO-126-3, current - collector (ic) (max) 300mA.

In Stock: 4,267

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)95V
Frequency - Transition1.2GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max3W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Current - Collector (Ic) (Max)300mA
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126

Frequently Asked Questions

NTE2633 is a Transistors - Bipolar (BJT) - RF manufactured by NTE Electronics, Inc. T-NPN SI VIDEO DR 1GHZ TO-126

The mounting type of NTE2633 is Through Hole.

The operating temperature range of NTE2633 is 175°C (TJ).

The package type of NTE2633 is TO-225AA, TO-126-3.

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