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NTE2370 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single, Pre-Biased

NTE2370

NTE Electronics, Inc

T-PNP SI DIGITAL 4.7K/47K

NTE2370 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NTE Electronics, Inc. T-PNP SI DIGITAL 4.7K/47K. Key specifications: mounting type Through Hole, package / case TO-226-3, TO-92-3 Short Body, current - collector (ic) (max) 100 mA, power - max 200 mW.

In Stock: 622

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition200 MHz
Power - Max200 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Short Body
Supplier Device PackageTO-92S

Frequently Asked Questions

NTE2370 is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by NTE Electronics, Inc. T-PNP SI DIGITAL 4.7K/47K

The mounting type of NTE2370 is Through Hole.

The package type of NTE2370 is TO-226-3, TO-92-3 Short Body.

The current rating of NTE2370 is 100 mA.

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