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2N5551 - NTE Electronics, Inc - Transistors - Bipolar (BJT) - Single

2N5551

NTE Electronics, Inc

TRANS NPN 160V 0.2A TO92

2N5551 is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN 160V 0.2A TO92. Key specifications: mounting type Through Hole, package / case TO-226-3, TO-92-3 (TO-226AA) Formed Leads, current - collector (ic) (max) 200 mA, power - max 625 mW.

In Stock: 2,984

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)160 V
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Power - Max625 mW
Frequency - Transition300MHz
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92

Frequently Asked Questions

2N5551 is a Transistors - Bipolar (BJT) - Single manufactured by NTE Electronics, Inc. TRANS NPN 160V 0.2A TO92

The mounting type of 2N5551 is Through Hole.

The package type of 2N5551 is TO-226-3, TO-92-3 (TO-226AA) Formed Leads.

The current rating of 2N5551 is 200 mA.

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