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PDTA123JQAZ - Nexperia USA Inc. - Transistors - Bipolar (BJT) - Single, Pre-Biased

PDTA123JQAZ

Nexperia USA Inc.

TRANS PREBIAS PNP 3DFN

PDTA123JQAZ is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. TRANS PREBIAS PNP 3DFN. Key specifications: mounting type Surface Mount, package / case 3-XDFN Exposed Pad, current - collector (ic) (max) 100 mA, power - max 280 mW.

In Stock: 70,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition180 MHz
Power - Max280 mW
Mounting TypeSurface Mount
Package / Case3-XDFN Exposed Pad
Supplier Device PackageDFN1010D-3

Frequently Asked Questions

PDTA123JQAZ is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Nexperia USA Inc.. TRANS PREBIAS PNP 3DFN

The mounting type of PDTA123JQAZ is Surface Mount.

The package type of PDTA123JQAZ is 3-XDFN Exposed Pad.

The current rating of PDTA123JQAZ is 100 mA.

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Manufacturers in Transistors - Bipolar (BJT) - Single, Pre-Biased

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