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LM5112MY - National Semiconductor - PMIC - Gate Drivers

LM5112MY

National Semiconductor

BUFFER/INVERTER BASED MOSFET DRI

LM5112MY is a PMIC - Gate Drivers manufactured by National Semiconductor. BUFFER/INVERTER BASED MOSFET DRI. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 125°C (TJ), voltage - supply 3.5V ~ 14V, package / case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad.

In Stock: 1,793

Product Attributes

AttributeValue
Product StatusActive
Driven ConfigurationLow-Side
Channel TypeSingle
Number of Drivers1
Gate TypeN-Channel MOSFET
Voltage - Supply3.5V ~ 14V
Logic Voltage - VIL, VIH0.8V, 2.3V
Current - Peak Output (Source, Sink)3A, 7A
Input TypeInverting, Non-Inverting
High Side Voltage - Max (Bootstrap)-
Rise / Fall Time (Typ)14ns, 12ns
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package8-MSOP-PowerPad

Frequently Asked Questions

LM5112MY is a PMIC - Gate Drivers manufactured by National Semiconductor. BUFFER/INVERTER BASED MOSFET DRI

The mounting type of LM5112MY is Surface Mount.

The operating temperature range of LM5112MY is -40°C ~ 125°C (TJ).

The supply voltage of LM5112MY is 3.5V ~ 14V.

Alternative Products

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MCP14A0302T-E/SN Microchip Technology IC GATE DRVR HI/LOW SIDE 8SOIC 96% View
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MCP14A0302-E/SN Microchip Technology IC GATE DRVR HI/LOW SIDE 8SOIC 96% View

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